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2SC3229 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter and general purpose appl

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Other Datasheets by Inchange Semiconductor

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3229 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 20 mA 2 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.