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2SC3231 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min) Large Current Capability High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

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isc Silicon NPN Power Transistor 2SC3231 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min) ·Large Current Capability ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.