2SC3264 Overview
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 230V(Min) ·Good Linearity of hFE ·plement to Type 2SA1295 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3264 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
