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2SC3280 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 8A Complement to Type 2SA1301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applicati

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isc Silicon NPN Power Transistor 2SC3280 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 8A ·Complement to Type 2SA1301 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.