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2SC3296 Datasheet Preview

2SC3296 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
2SC3296
TDESCRIPTIONT
·Collector-Emitter Breakdown Voltage-
: V = B(BR)CEOB 150V(Min)
·Complement to Type 2SA1304
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TAPPLICATIONST
·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(TBaB=25)
SYMBOL
PARAMETER
VALUE UNIT
V CBO B
B
Collector-Base Voltage
150
V
V CEO B
B
Collector-Emitter Voltage
150
V
V EBO B
B
Emitter-Base Voltage
5
V
I CB
B
Collector Current-Continuous
1.5
A
I BB
B
Base Current-Continuous
Collector Power Dissipation
@TBaB=25
P CB
B
Collector Power Dissipation
@TBCB=25
T JB
B
Junction Temperature
0.5
A
2
W
20
150
T stg B
B
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3296 Datasheet Preview

2SC3296 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VBCE(sat)B
Collector-Emitter Saturation Voltage
I = CB
B
0.5A;
I = BB
B
50mA
VBBE(on)B Base-Emitter On Voltage
I = CB
B
0.5A;
V = CE B
B
10V
I CBO B
B
Collector Cutoff Current
V = CB B
B
120V;
I = EB
B
0
I EBO B
B
Emitter Cutoff Current
V = EB B
B
5V;
I = CB
B
0
h FE B
B
DC Current Gain
I = CB
B
0.5A;
V = CE B
B
10V
f TB
B
Current-Gain—Bandwidth Product
I = CB
B
0.5A;
V = CE B
B
10V
C OB B
B
Output Capacitance
I = EB
B
0;
V = CB B
B
10V;
f=
1MHz
2SC3296
MIN TYP. MAX UNIT
1.5
V
0.85
V
10
μA
10
μA
40
140
4
MHz
35
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SC3296
Description NPN Transistor
Maker INCHANGE
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