Collector-Emitter Breakdown Voltage-
: V = B(BR)CEOB 150V(Min)
Complement to Type 2SA1304
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TAPPLICATIONST
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
2SC3296
TDESCRIPTIONT ·Collector-Emitter Breakdown Voltage-
: V = B(BR)CEOB 150V(Min) ·Complement to Type 2SA1304 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TAPPLICATIONST ·Power amplifier applications. ·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(TBaB=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V CBO B
B
Collector-Base Voltage
150
V
V CEO B
B
Collector-Emitter Voltage
150
V
V EBO B
B
Emitter-Base Voltage
5
V
I CB
B
Collector Current-Continuous
1.5
A
I BB
B
Base Current-Continuous
Collector Power Dissipation
@TBaB=25℃
P CB
B
Collector Power Dissipation
@TBCB=25℃
T JB
B
Junction Temperature
0.5
A
2 W
20
150
℃
T stg B
B
Storage Temperature
-55~150 ℃
isc website： www.
2SC3296 Datasheet
