| Part number | 2SC3298B |
|---|---|
| Datasheet | 2SC3298B-INCHANGE.pdf |
| File Size | 210.61 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·plement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3298B | Silicon NPN Transistor | Toshiba Semiconductor |
 |
2SC3298B | COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
 |
2SC3298 | Silicon NPN Transistor | Toshiba |
|
2SC3298A | Silicon NPN Transistor | Toshiba |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3298 | NPN Transistor |
| 2SC3298A | NPN Transistor |
| 2SC3296 | NPN Transistor |
| 2SC3297 | NPN Transistor |
| 2SC3299 | NPN Transistor |
| 2SC3210 | NPN Transistor |
| 2SC3211 | NPN Transistor |
| 2SC3212 | NPN Transistor |
| 2SC3214 | NPN Transistor |
| 2SC3223 | NPN Transistor |
