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2SC3296 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V = B(BR)CEOB 150V(Min) Complement to Type 2SA1304 Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST

Power amplifier applications.

Vertical output applications.

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Datasheet Details

Part number 2SC3296
Manufacturer INCHANGE
File Size 193.02 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT ·Collector-Emitter Breakdown Voltage- : V = B(BR)CEOB 150V(Min) ·Complement to Type 2SA1304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT V CBO B B Collector-Base Voltage 150 V V CEO B B Collector-Emitter Voltage 150 V V EBO B B Emitter-Base Voltage 5 V I CB B Collector Current-Continuous 1.5 A I BB B Base Current-Continuous Collector Power Dissipation @TBaB=25℃ P CB B Collector Power Dissipation @TBCB=25℃ T JB B Junction Temperature 0.5 A 2 W 20 150 ℃ T stg B B Storage Temperature -55~150 ℃ isc website： www.
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