2SC3296 Description
isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT ·Collector-Emitter Breakdown Voltage- : V = B(BR)CEOB 150V(Min) ·plement to Type 2SA1304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST ·Power amplifier applications. ·Vertical output applications.