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2SC3297 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) Good Linearity of hFE Complement to Type 2SA1305 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Car radio, car stereo output stage amp

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1305 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Car radio, car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3297 isc website： www.iscsemi.