Datasheet4U Logo Datasheet4U.com

2SC3300 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3300 SILICON POWER TRANSISTOR SavantIC
2SC3301 Silicon NPN Transistor Toshiba
2SC3302 Silicon NPN Transistor Toshiba Semiconductor
2SC3303 NPN Epitaxial Planar Silicon Transistor SeCoS
2SC3303 SILICON NPN TRANSISTOR Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3306 NPN Transistor
2SC3307 NPN Transistor
2SC3309 NPN Transistor
2SC3310 NPN Transistor
2SC3317 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.