Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
Fast Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose pow
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Total Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
1.5 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3317
isc website：www.iscsemi.
2SC3317 Datasheet
