Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=6A
High Speed Switching Time
: tstg= 1.0μs
Complement to Type 2SA1329
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high current switching applications
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isc Silicon NPN Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=6A ·High Speed Switching Time
: tstg= 1.0μs ·Complement to Type 2SA1329 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3346
isc website：www.iscsemi.
2SC3346 Datasheet
