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2SC3420 - NPN Transistor

Description

High Collector Current-IC= 5.0A DC Current Gain- : hFE= 70(Min)@IC= 4A Low Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Strobe flash applications.

Medium power amplifier

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.0A ·DC Current Gain- : hFE= 70(Min)@IC= 4A ·Low Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications. ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.
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