Datasheet4U Logo Datasheet4U.com

2SC3458 - NPN Transistor

General Description

High Breakdown Voltage- : V(BR)CBO= 1100V(Min) Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3458 NPN Triple Diffused Planar Type Silicon Transistor Sanyo Semicon Device
2SC3458 SILICON POWER TRANSISTOR SavantIC
2SC3450 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3451 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3451 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3450 NPN Transistor
2SC3451 NPN Transistor
2SC3456 NPN Transistor
2SC3457 NPN Transistor
2SC3459 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3458 isc website：www.iscsemi.