Datasheet4U Logo Datasheet4U.com

2SC3481 - NPN Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3481 NPN Transistor Sanyo Semicon Device
2SC3480 Power Transistor Inchange Semiconductor
2SC3482 NPN Triple Diffused Planar Type Silicon Transistor Sanyo Semicon Device
2SC3483 NPN Triple Diffused Planar Type Silicon Transistor Sanyo Semicon Device
2SC3484 NPN Transistor Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3482 NPN Transistor
2SC3486 NPN Transistor
2SC3409 NPN Transistor
2SC3416 NPN Transistor
2SC3419 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3481 isc website：www.iscsemi.