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isc Silicon NPN Power Transistor
2SC3506
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed
APPLICATIONS ·Designed for switching regulator and high voltage
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
2
A
70 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SC3506 Datasheet
