Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A
Good Linearity of hFE
Complement to Type 2SA1386/A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose app
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A
·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
2SC3519
160
VCBO
Collector-Base Voltage
V
2SC3519A
180
2SC3519
160
VCEO
Collector-Emitter Voltage
V
2SC3519A
180
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
130
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3519/A
isc website：www.
2SC3519 Datasheet
