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2SC3528 - NPN Transistor

General Description

Low Collector Saturation Voltage High Collector Current Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

switching applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 125 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3528 isc website：www.iscsemi.