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2SC3568 - NPN Transistor

General Description

Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1396 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

high frequency power amplifier applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SA1396 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3568 isc website：www.iscsemi.