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2SC3571 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequ

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isc Silicon NPN Power Transistor 2SC3571 DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3.