Datasheet Details
| Part number | 2SC3588-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 237.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3588-Z-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3588-Z.
| Part number | 2SC3588-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 237.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3588-Z-INCHANGE.pdf |
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·Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·Complement to Type 2SA1400-Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high Voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA;
IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 300mA;
Compare 2SC3588-Z distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3588-Z | NPN Transistor | NEC |
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2SC3588-Z | NPN Transistor | Kexin |
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