| Part Number | 2SC3588-Z Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
* High Voltage VCEO = 400 V * Complement to 2SA1400-Z 5.5 ±0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 *0.1 2.3 ±0.2 0.5 ±0.1 Note 5.6 ±0.3 9.5 ±0.5 123 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 500 V Collector to Emitte. |
2SC3588-Z Datasheet and Specifications PDF
The 2SC3588-Z is a NPN Transistor.
Key Specifications
| Pins | 3 |
|---|
| Part Number | 2SC3588-Z Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0. High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage. |
| Part Number | 2SC3588-Z Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·Complement to Type 2SA1400-Z ·Minimum Lot-to-Lot variations for robust. IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 300mA; IB= 60mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 5V hFE-2 DC Current Gain. |