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2SC3588-Z - NPN Transistor

General Description

The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.

Key Features

  • High Voltage VCEO = 400 V.
  • Complement to 2SA1400-Z 5.5 ±0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2.
  • 0.1 2.3 ±0.2 0.5 ±0.1 Note 5.6 ±0.3 9.5 ±0.5 123 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SC3588-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • Complement to 2SA1400-Z 5.5 ±0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 5.6 ±0.3 9.5 ±0.5 123 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 500 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) 0.5 A Collector Current (pulse) Note 1 IC(pulse) 1.0 A Total Power Dissipation (TA = 25°C) Note 2 PT 2.0 W Junction Temperature Tj 150 °C 2.3 ±0.3 0.5 ±0.