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2SC3588-Z - NPN Transistor

Key Features

  • High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current.
  • 1 Collector current Total power dissipation Junction temperature Storage temperature.
  • 1 pw 10ms,Duty cycle 50%.

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Full PDF Text Transcription (Reference)

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SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current *1 Collector current Total power dissipation Junction temperature Storage temperature *1 pw 10ms,Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm TC = 25 *2 Symbol VCBO VCES VEBO ICP IC PT Tj Tstg Rating 500 400 7 1 0.