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2SC3585 - NPN Transistor

Key Features

  • NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 20 10 1.5 35 200 150 -65 to +150 Unit V V V mA mW Electrical Characteristi.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type NPN Silicon Epitaxial Transistor 2SC3585 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 20 10 1.