2SC3585 - Silicon NPN Transistor

Inchange Semiconductor

General Description

Collector Current IC= 35mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) Minimum Lot-to-Lot variations for robust device performance and reliabl

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Datasheet Details

Part number	2SC3585
Manufacturer	Inchange Semiconductor
File Size	209.95 KB
Description	Silicon NPN Transistor
Datasheet	2SC3585 Datasheet

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2SC3582	Silicon NPN RF Transistor
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isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forVHF, UHF and CATV high frequency wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.