Datasheet Summary
isc Silicon NPN RF Transistor
DESCRIPTION
- Collector Current IC= 35mA
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 10V(Min)
- High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz)
- Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed forVHF, UHF and CATV high frequency wideband low noise amplifier...
