NEC 2SC3587
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.| Part No. | 2SC3587 |
|---|---|
| Datasheet | 2SC3587 Download |
| Manufacturer |  NEC |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz● High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 °
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 35 580 200 -65 to +150 UNIT V V V mA mW °C °C PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 E φ 2.1 1.8 MAX. 0.55ELECTRICAL CHARACTERISTICS
(TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure SYMBOL ICBO IEBO hFE fT Cre NF Note TEST CONDITIONS VCB = 10 V VEB = 1 V VCE = 6 V, IC = 10 mA Pulse VCE = 6 V, IC = 10 mA VCB = 10 V, f = 1 MHz VCE = 6 V, IC = 5 mA f = 2 GHz f = 4 GHz MIN. TYP. 0.1+0.06 -0.03 MAX.
