2SC3587 Overview
Key Features
- Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz
- High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 °
| Part | 2SC3587 |
|---|---|
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Category | Transistor |
| Manufacturer | NEC |
| Size | 91.02 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3585 | Slkor Micro Semicon | NPN High-frequency low-noise transistor |
| 2SC3582 | Inchange Semiconductor | Silicon NPN RF Transistor |
| C3581 | Isahaya Electronics Corporation | 2SC3581 |
| 2SC3585 | Kexin Semiconductor | NPN Transistor |
| 2SC3585 | Inchange Semiconductor | Silicon NPN Transistor |