Datasheet Details
| Part number | 2SC3587 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 91.02 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Datasheet | 2SC3587_NEC.pdf |
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Overview: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN.
| Part number | 2SC3587 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 91.02 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Datasheet | 2SC3587_NEC.pdf |
|
|
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| Part Number | Description |
|---|---|
| 2SC3582 | NPN Silicon Transistor |
| 2SC3583 | NPN Silicon Transistor |
| 2SC3585 | NPN Transistor |
| 2SC3588-Z | NPN Transistor |
| 2SC3518-Z | NPN Transistor |
| 2SC3545 | NPN Silicon Transistor |
| 2SC3554 | NPN Silicon Transistor |
| 2SC3567 | NPN SILICON POWER TRANSISTOR |
| 2SC3568 | NPN SILICON POWER TRANSISTOR |
| 2SC3570 | NPN SILICON POWER TRANSISTOR |