Datasheet Details
| Part number | 2SC3583 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 103.74 KB |
| Description | NPN Silicon Transistor |
| Datasheet | 2SC3583_NEC.pdf |
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Overview: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL.
| Part number | 2SC3583 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 103.74 KB |
| Description | NPN Silicon Transistor |
| Datasheet | 2SC3583_NEC.pdf |
|
|
|
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
Compare 2SC3583 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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|---|---|
| 2SC3582 | NPN Silicon Transistor |
| 2SC3585 | NPN Transistor |
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| 2SC3518-Z | NPN Transistor |
| 2SC3545 | NPN Silicon Transistor |
| 2SC3554 | NPN Silicon Transistor |
| 2SC3567 | NPN SILICON POWER TRANSISTOR |
| 2SC3568 | NPN SILICON POWER TRANSISTOR |
| 2SC3570 | NPN SILICON POWER TRANSISTOR |