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2SC3583 - NPN Silicon Transistor

General Description

The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Key Features

  • NF.
  • Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 2.9±0.2 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 0.4 −0.05 +0.1 1.5 0.65 −0.15 +0.1 0.95 0.95 FEATURES • NF • Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 2.9±0.