Datasheet Summary
DATA SHEET SHEET DATA
SILICON TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2
- 0.05
+0.1
- 0.15
+0.1
0.95 0.95
Features
- NF
- Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz
2.9±0.2
ABSOLUTE...
