| Part number | 2SC3583 |
|---|---|
| Datasheet | 2SC3583_NEC.pdf |
| File Size | 103.74 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | NPN Silicon Transistor |
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The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3583 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
 |
2SC3583 | Silicon NPN RF Transistor | Inchange Semiconductor |
 |
2SC3583 | NPN Silicon Epitaxial Transistor | Kexin |
 |
2SC3583 | NPN Silicon Transistor | CEL |
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| 2SC3582 | NPN Silicon Transistor |
| 2SC3585 | NPN Transistor |
| 2SC3587 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC3588-Z | NPN Transistor |
| 2SC3518-Z | NPN Transistor |
| 2SC3545 | NPN Silicon Transistor |
| 2SC3554 | NPN Silicon Transistor |
| 2SC3567 | NPN SILICON POWER TRANSISTOR |
| 2SC3568 | NPN SILICON POWER TRANSISTOR |
| 2SC3570 | NPN SILICON POWER TRANSISTOR |
