| Part Number | 2SC3583 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve .
* NF * Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 2.9±0.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg. |
2SC3583 Datasheet and Specifications PDF
The 2SC3583 is a NPN Silicon Transistor.
Key Specifications
| Package | SC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Width | 1.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | 2SC3583 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.2 dB TYP. @f = 1.0 GHz Ga 13 dB TYP. @f = 1.0 GHz +0.1 1.3-0.. NF 1.2 dB TYP. @f = 1.0 GHz Ga 13 dB TYP. @f = 1.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage . |
| Part Number | 2SC3583 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise and High Gain
NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for rob.
; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 10V
fT
Current-Gain *Bandwidth Product IC= 20mA ; VCE= 8V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 8V;f= 1.0GHz MAG Maximum Available Gain IC= 20mA ; VCE= 8V;f= 1.0GHz NF Noise Figure IC. |
| Part Number | 2SC3583 Datasheet |
|---|---|
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 2SC3853 is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with high current gain and high current capability, etc.
3
2 1 SOT-23
(JEDEC TO-236)
54 6
2.
* High current gain * High current capability
12 SOT-523
12 SOT-723
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3583L-x-AE3-R 2SC3583G-x-AE3-R SOT-23 2SC3583L-x-AN3-R 2SC3583G-x-AN3-R SOT-523 2SC3583L-x-AQ3-R 2SC3583G-x-AQ3-R SOT-723 2SC3583L-x-AL6-R 2S. |