Datasheet Details
| Part number | 2SC3583 |
|---|---|
| Manufacturer | CEL |
| File Size | 1.70 MB |
| Description | NPN Silicon Transistor |
| Datasheet | 2SC3583-CEL.pdf |
|
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Overview: DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.1UT −0.05 1.1PHASEto1.4 0.
| Part number | 2SC3583 |
|---|---|
| Manufacturer | CEL |
| File Size | 1.70 MB |
| Description | NPN Silicon Transistor |
| Datasheet | 2SC3583-CEL.pdf |
|
|
|
The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3583 | NPN Silicon Transistor | NEC |
 |
2SC3583 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
 |
2SC3583 | Silicon NPN RF Transistor | Inchange Semiconductor |
 |
2SC3583 | NPN Silicon Epitaxial Transistor | Kexin |
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| 2SC5704-A | NPN SILICON RF TRANSISTOR |
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