2SC3583 datasheet by CEL.
| Part number | 2SC3583 |
|---|---|
| Datasheet | 2SC3583-CEL.pdf |
| File Size | 1.70 MB |
| Manufacturer | CEL |
| Description | NPN Silicon Transistor |
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The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3583 | NPN Silicon Transistor | NEC |
 |
2SC3583 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
 |
2SC3583 | Silicon NPN RF Transistor | Inchange Semiconductor |
 |
2SC3583 | NPN Silicon Epitaxial Transistor | Kexin |
| Part Number | Description |
|---|---|
| 2SC3357 | NPN SILICON RF TRANSISTOR |
| 2SC4094 | SILICON TRANSISTOR |
| 2SC4227 | NPN SILICON RF TRANSISTOR |
| 2SC4703 | NPN SILICON RF TRANSISTOR |
| 2SC5006 | NPN Transistor |
| 2SC5007 | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5015 | NPN EPITAXIAL SILICON RF TRANSISTOR |
| 2SC5704 | NPN SILICON RF TRANSISTOR |
| 2SC5704-A | NPN SILICON RF TRANSISTOR |
| 2SC5704-T3-A | NPN SILICON RF TRANSISTOR |
