CEL 2SC3583
2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.| Part No. | 2SC3583 |
|---|---|
| Datasheet | 2SC3583 Download |
| Manufacturer |  CEL |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
DESCRIPTION
The NE68133 / Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.FEATURES
● NF● Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1 −0.15 0.4 2 13 +0.1 −0.05 2.9±0.2O 0.95 0.95 0.4 +0.1 −0.06 0.16
ABSOLUTE MAXIMUM RATINGS
(TA = 25 C) Collector to Base Voltage VCBO 20 Collector to Emitter Voltage VCEO 10 Emitter to Base Voltage VEBO 1.5 Collector Current IC 65 Total Power Dissipation PT
