Datasheet Summary
NPN High-frequency low-noise transistor.
Description
The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It Features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. It es in a
SOT-23-3L surface-mount package and is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Features
Highgain:|S21e|typically5.5dB Lownoise: NFtypically2.5dB
@ VCE=6V，IC=10mA，f=2GHz @ VCE=6V，IC=5mA， f=2GHz @ VCE=6V，IC=10mA，f=1GHz
Limit parameters (TA=25℃)
Parameter
Collector-basebreakdownvoltage. Collector-emitterbreakdownvoltage. Emitter-basebreakdownvoltage....
