DESCRIPTION
FEATURES
Highgain:|S21e|typically5.5dB Lownoise: NFtypically2.5dB 10 @ VCE=6V，IC=10mA，f=2GHz @ VCE=6V，IC=5mA， f=2GHz @ VCE=6V，IC=10mA，f=1GHz Limit parameters (TA=25℃) Parameter Collector-basebreakdownvoltage. Collector-emitterbreakdownvoltage. Emitter-basebreakdownvoltage. Collector current. Power dissipation. Junction temperature. Storagetemperature. Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 20 10 1.5 35 200 150 -65 ~ +150 Unit V V V mA mW ℃ ℃ HFE p o s i t i o n Binning Label HFE A R43 60-100 B R44 90-140 C D R45 120-180 170-250 1 Electrical Characteristic (TA=25℃) 2SC3585 Parameter Symbol Min Typ Max Unit Text Condition Collector-basebreakdownvoltage. VCBO 20 Collector-base leakagecurrent. ICBO Emitter-base leakagecurrent. IEBO DC gain. HFE 60 Gain-bandwidth product. fT Output feedback capacitor. Cre power gain. | S21e |2 Noise figure. NF V IC=1.0µA 0.1 µA VCB=10V 0.1 µA VEB=1V 150 250 VCE=6V,IC=10mA 10 GHz VCE=6V,IC=10mA 0.3 0.8 pF VCB=10V,IE=0mA,f=1MHz 5.5 dB VCE=6V,IC=10mA,f=2GHz 2.5 3.0 dB VCE=6V,IC=5mA,f=2GHz Package SOT-23-3L Pin Definition：1：Base 2：Emitter 3：Collector SOT-23-3L Symbol Min Max （mm）（mm） A 0.35 0.
Slkor
