2SC3585 Overview
Description
The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics.
Key Features
- Collector-emitterbreakdownvoltage
- Emitter-basebreakdownvoltage
- Junction temperature
- Storagetemperature
- VCBO 20 Collector-base leakagecurrent
- ICBO Emitter-base leakagecurrent
- HFE 60 Gain-bandwidth product
- fT Output feedback capacitor
- S21e |2 Noise figure
