| Part Number | 2SC3585 Datasheet |
|---|---|
| Manufacturer | Slkor Micro Semicon |
| Overview | The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and ideal current. high power gain, low noise figure, wide dynamic range, and ideal current characteristics. It comes in a SOT-23-3L surface-mount package and is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers. Features Highgain:|S21e|typically5.5dB Lownoise: NFtypically2.5dB 10 @. |
2SC3585 Datasheet and Specifications PDF
The 2SC3585 is a NPN High-frequency low-noise transistor.
Key Specifications
| Part Number | 2SC3585 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | NEC |
| Overview | The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise fi. excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide . |
| Part Number | 2SC3585 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Silicon Epitaxial Transistor 2SC3585 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz +0.1 1.3-0.1. NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage C. |
| Part Number | 2SC3585 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA.
se Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter-Base Cutoff Current
hFE
DC Current Gain
fT
Current-Gain *Bandwidth Product Cre Output feedback capacitance | S21e |2 Power gain NF Noise factor CONDITIONS IC= 1uA ; IE= 0 VCB= 10V; IE= 0 VEB= 1V; IE= 0 IC= 10mA ; VCE= 6V VC. |