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2SC3582 - NPN Silicon Transistor

General Description

The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Key Features

  • NF.
  • Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. 5.5 MAX. (0.216 MAX.) PACKAFE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES • NF • Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.