Datasheet Details
| Part number | 2SC3582 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 99.77 KB |
| Description | NPN Silicon Transistor |
| Datasheet | 2SC3582_NEC.pdf |
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Overview: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL.
| Part number | 2SC3582 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 99.77 KB |
| Description | NPN Silicon Transistor |
| Datasheet | 2SC3582_NEC.pdf |
|
|
|
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3582 | Silicon NPN RF Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SC3583 | NPN Silicon Transistor |
| 2SC3585 | NPN Transistor |
| 2SC3587 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC3588-Z | NPN Transistor |
| 2SC3518-Z | NPN Transistor |
| 2SC3545 | NPN Silicon Transistor |
| 2SC3554 | NPN Silicon Transistor |
| 2SC3567 | NPN SILICON POWER TRANSISTOR |
| 2SC3568 | NPN SILICON POWER TRANSISTOR |
| 2SC3570 | NPN SILICON POWER TRANSISTOR |