| Part Number | 2SC3582 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve .
* NF * Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO V. |
2SC3582 Datasheet and Specifications PDF
The 2SC3582 is a NPN Silicon Transistor.
| Part Number | 2SC3582 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz.
OL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 8V
fT
Current-Gain *Bandwidth Product IC= 20mA ; VCE= 8V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S21e︱2 Insertion Power G. |