2SC3583 Overview
Description
Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz - High Power Gain MAG = 15dB TYP.
| Part | 2SC3583 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 406.82 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3583 | NEC | NPN Silicon Transistor |
| 2SC3583 | Kexin Semiconductor | NPN Silicon Epitaxial Transistor |
| 2SC3583 | Unisonic Technologies | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC3583 | CEL | NPN Silicon Transistor |
| 2SC3585 | Slkor Micro Semicon | NPN High-frequency low-noise transistor |