NF = 1.2 dB TYP., Ga = 11 dB TYP.
High Power Gain MAG = 15dB TYP.
Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise| Part number | 2SC3583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 406.82 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
 2SC3583 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2SC3583 | NPN Silicon Transistor | NEC |
| 2SC3583 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
| 2SC3583 | NPN Silicon Epitaxial Transistor | Kexin |
| 2SC3583 | NPN Silicon Transistor | CEL |
| 2SC3580 | SMALL-SIGNAL TRANSISTOR | Isahaya Electronics |
| Part Number | Description |
|---|---|
| 2SC3582 | Silicon NPN RF Transistor |
| 2SC3585 | Silicon NPN Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
