2SC3583 datasheet by Inchange Semiconductor.
| Part number | 2SC3583 |
|---|---|
| Datasheet | 2SC3583-InchangeSemiconductor.pdf |
| File Size | 406.82 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
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·Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3583 | NPN Silicon Transistor | NEC |
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2SC3583 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
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2SC3583 | NPN Silicon Epitaxial Transistor | Kexin |
 |
2SC3583 | NPN Silicon Transistor | CEL |
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|---|---|
| 2SC3582 | Silicon NPN RF Transistor |
| 2SC3585 | Silicon NPN Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3512 | Silicon NPN RF Transistor |
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
| 2SC3547 | Silicon NPN RF Transistor |
| 2SC3547A | Silicon NPN RF Transistor |
