2SC3591 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC3591 TC=25℃ unless otherwise specified SYMBOL...
