Datasheet4U Logo Datasheet4U.com

2SC3749 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for switching regulator applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3749 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3743 Silicon NPN Transistor Panasonic Semiconductor
2SC3746 NPN Transistor Sanyo Semicon Device
2SC3746 SILICON POWER TRANSISTOR SavantIC
2SC3747 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3743 NPN Transistor
2SC3746 NPN Transistor
2SC3747 Silicon NPN Power Transistor
2SC3748 NPN Transistor
2SC3709A NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3749 isc website：www.iscsemi.