2SC3752 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for switching regulator applications.

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2SC3752 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC3752
Manufacturer	Inchange Semiconductor
File Size	207.61 KB
Description	NPN Transistor
Datasheet	2SC3752 Datasheet

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2SC3750	NPN Transistor
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3752 isc website：www.iscsemi.