High Breakdown Voltage-
: VCBO= 150V (Min)
High Switching Speed
Wide Area of Safe Operation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in high speed and power Switching applicat
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3762
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 150V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high speed and power Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current- Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
30
A
65
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC3762 Datasheet
