2SC3795 Overview
·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...
