2SC3821 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state relay Genera

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Datasheet Details

Part number	2SC3821
Manufacturer	Inchange Semiconductor
File Size	208.14 KB
Description	NPN Transistor
Datasheet	2SC3821 Datasheet

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isc Silicon NPN Power Transistor 2SC3821 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.