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2SC3830 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.