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2SC3843 - NPN Transistor

General Description

High Breakdown Voltage High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for silicon high speed transistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3843 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for silicon high speed transistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.