Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
DC Current Gain-
: hFE= 40(Min)@ IC= 1A
Complement to Type 2SA1488A
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and gen
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3851A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= 1A ·Complement to Type 2SA1488A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
25
W
150
℃
-55~150 ℃
isc website：www.iscsemi.
2SC3851A Datasheet
