Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
Good Linearity of hFE
Complement to Type 2SA1490
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=2
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1490 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3854
isc website：www.iscsemi.
2SC3854 Datasheet
