Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
Low Collector Saturation Voltage
Wide Area of Safe Operation
High Speed Switching
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high speed switching a
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
0.
2SC3868 Datasheet
