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2SC3873 - NPN Transistor

General Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) Low Collector Saturation Voltage Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.