High Breakdown Voltage-
：VCBO= 1400V (Min)
High Switching Speed
Low Saturation Voltage
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for horizontal deflection output applications
ABSOLUTE
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1400V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1400
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
7
A
ICM
Collector Current- Peak
14
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3892
isc website：www.iscsemi.
2SC3892 Datasheet
