2SC3892 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;.
