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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3902
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Large Current Capacity ·Complement to Type 2SA1507 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV audio output, converters, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
2.5
A
10 W
1.