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2SC3910 - NPN Transistor

General Description

High Speed Switching High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta

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isc Silicon NPN Power Transistor DESCRIPTION ·High Speed Switching ·High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 150 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3910 isc website：www.iscsemi.