High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
Good Linearity of hFE
Complement to Type 2SA1535
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For low frequency driver and high power amplification.
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isc Silicon NPN Power Transistor
2SC3944
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1535 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For low frequency driver and high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
1.5
A
15 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SC3944 Datasheet
